? semiconductor components industries, llc, 2007 july, 2007 - rev. p2 1 publication order number: NLAS9099/d NLAS9099 product preview dual dpdt ultra-low r on switch the NLAS9099 is a dual independent ultra-low r on dpdt analog switch. this device is designed for low operating voltage, high current switching of speaker output for cell phone applications. it can switch a balanced stereo output. the NLAS9099 can handle a balanced microphone/speaker/ring-tone generator in a monophone mode. the device contains a break-before-make feature. features ? suitable for dual sim cards ? single supply operation 1.65 to 4.5 v v cc function directly from lion battery ? maximum breakdown voltage: 5.5 v ? tiny 3 x 3 mm qfn pb-free package meet jedec mo-220 specifications ? low static power ? this is a pb-free device* typical applications ? cell phone speaker/microphone switching ? ringtone-chip/amplifier switching ? four unbalanced (single-ended) switches ? stereo balanced (push-pull) switching important information ? esd protection: hbm (human body model) > 8000 v mm (machine model) > 400 v ? continuous current rating through each switch 300 ma ? conforms to: jedec mo-220, issue h, variation veed-6 ? pin for pin compatible with stg3699 for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com qfn-16 case 485ae marking diagrams see detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. ordering information 1 16 nlab 3699 alyw 1 a = assembly location l = wafer lot y = year w = work week = pb-free package (note: microdot may be in either location) ?? ?? http://onsemi.com 4 1 16 13 9 12 58 14 7 15 6 310 211 d1 1s1 vcc 4s2 2s2 gnd 3s1 d3 3s2 3-4in 4s1 d4 d2 2s1 1-2in 1s2
NLAS9099 http://onsemi.com 2 figure 1. input equivalent circuit s1 in s2 d pin description qfn pin # symbol name and function 1, 3, 5, 7, 9, 11, 13, 15 1s1 to 4s1, 1s2 to 4s2 independent channels 2, 10 1-2in, 3-4in controls 4, 8, 12, 16 d1 to d4 common channels 6 gnd ground (v) 14 v cc positive supply voltage truth table in s1 s2 h on off(*) l off(*) on high impedance.
NLAS9099 http://onsemi.com 3 maximum ratings symbol parameter value unit v cc positive dc supply voltage 0.5 to 5.5 v v is analog input voltage (v no , v nc , or v com ) 0.5 v is v cc v v in digital select input voltage 0.5 v i 5.5 v i anl1 continuous dc current from com to nc/no 300 ma i anl-pk 1 peak current from com to nc/no, 10 duty cycle (note no tag) 500 ma i clmp continuous dc current into com/no/nc with respect to v cc or gnd 100 ma t r , t f input rise or fall time, select v cc = 1.6 v - 2.7 v v cc = 3.0 v - 4.5 v 0 0 20 10 ns/v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. defined as 10% on, 90% off duty cycle. recommended operating conditions symbol parameter min max unit v cc dc supply voltage 1.65 4.5 v v in digital select input voltage gnd v cc v v is analog input voltage (nc, no, com) gnd v cc v t a operating temperature range 40 85 c t r , t f input rise or fall time, select v cc = 1.6 v - 2.7 v v cc = 3.0 v - 4.5 v 0 0 20 10 ns/v
NLAS9099 http://onsemi.com 4 dc characteristics - digital section (voltages referenced to gnd) symbol parameter condition v cc guaranteed limit unit 40 c to 25 c 85 c v ih minimum high-level input voltage, select inputs 1.8 2.5 3.6 4.3 1.2 1.7 2.2 2.6 1.2 1.7 2.2 2.6 v v il maximum low-level input voltage, select inputs 1.8 2.5 3.6 4.3 0.4 0.5 0.7 0.9 0.4 0.5 0.7 0.9 v i in maximum input leakage current, select inputs v in = v cc or gnd 4.3 0.1 1.0 a i off power off leakage current v in = v cc or gnd 0 0.5 2.0 a i cc maximum quiescent supply current (note no tag) select and v is = v cc or gnd 1.65 to 4.5 1.0 2.0 a dc electrical characteristics - analog section symbol parameter condition v cc guaranteed maximum limit unit -40 c to 25 c 85 c min max min max r on nc/no on-resistance (note no tag) v in v il or v in v ih v is = gnd to v cc i in i 100 ma 2.5 3.0 4.3 0.65 0.6 0.55 0.75 0.75 0.70 r flat nc/no on-resistance flatness (notes no tag, no tag) i com = 100 ma v is = 0 to v cc 2.5 3.0 4.3 0.15 0.15 0.15 0.15 0.15 0.15 r on on-resistance match between channels (notes no tag and no tag) v is = 1.3 v; i com = 100 ma v is = 1.5 v; i com = 100 ma v is = 2.2 v; i com = 100 ma 2.5 3.0 4.3 0.06 0.05 0.05 0.06 0.05 0.05 i nc(off) i no(off) nc or no off leakage current (note no tag) v in = v il or v ih v no or v nc = 0.3 v v com = 4.0 v 4.3 -10 10 -100 100 na i com(on) com on leakage current (note no tag) v in = v il or v ih v no 0.3 v or 4.0 v with v nc floating or v nc 0.3 v or 4.0 v with v no floating v com = 0.3 v or 4.0 v 4.3 -10 10 -100 100 na guaranteed by design. resistance measurements do not include test circuit or package resistance. r on = r on(m ax) - r on(min) between ns1 or ns2. flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal ranges.
NLAS9099 http://onsemi.com 5 ac electrical characteristics (input t r = t f = 3.0 ns) symbol parameter test conditions v cc (v) v is (v) guaranteed maximum limit unit 40 c to 25 c 85 c min typ* max min max t on turn-on time r l = 50 c l = 35 pf (figures 3 and 4) 2.3 - 4.5 1.5 50 60 ns t off turn-off time r l = 50 c l = 35 pf (figures 3 and 4) 2.3 - 4.5 1.5 30 40 ns t bbm minimum break-before-make time v is = 3.0 r l = 50 c l = 35 pf (figure 2) 3.0 1.5 2 15 ns typical @ 25, v cc = 4.5 v c in control pin input capacitance 7.0 pf c sn sn port capacitance 72 pf c d d port capacitance when switch is enabled 230 pf typical characteristics are at 25 c. additional application characteristics (voltages referenced to gnd unless noted) symbol parameter condition v cc (v) 25 c unit typical bw maximum on-channel -3db bandwidth or minimum frequency response (figure 12) v in centered between v cc and gnd (figure 5) 1.65 - 4.5 20 mhz v onl maximum feed-through on loss v in = 0 dbm @ 100 khz to 50 mhz v in centered between v cc and gnd (figure 5) 1.65 - 4.5 -0.06 db v iso off-channel isolation (figure 13) f = 100 khz; v is = 1 v rms; c l = 5 pf v in centered between v cc and gnd(figure 5) 1.65 - 4.5 -62 db q charge injection select input to common i/o (figure 8) v in = v cc to gnd, r is = 0 , c l = 1 nf q = c l x v out (figure 6) 1.65 - 4.5 50 pc thd total harmonic distortion thd + noise (figure 7) f is = 20 hz to 20 khz, r l = r gen = 600 , c l = 50 pf v is = 2 v pp 4.5 0.01 % vct channel-to-channel crosstalk f = 100 khz; v is = 1 v rms, c l = 5 pf, r l = 50 v in centered between v cc and gnd (figure 5) 1.65 - 4.5 -62 db off-channel isolation = 20log10 (vcom/vno), vcom = output, vno = input to off switch.
NLAS9099 http://onsemi.com 6 figure 2. t bbm (time break-before-make) output dut 50 35 pf v cc switch select pin 90% output input v cc gnd 90% of v oh gnd figure 3. t on /t off 50% 50% 90% 90% t on t off v oh output input v cc 0 v figure 4. t on /t off dut open 35 pf v cc input 50% 50% 10% t on t off output input v cc 0 v 10% 50 0.1 f t bmm output v out v ol v out v oh v ol dut open v cc input output 50 35 pf v out 0.1 f
NLAS9099 http://onsemi.com 7 channel switch control/s test socket is normalized. off isolation is measured across an off channel. on loss is the bandwidth of an on switch. v iso , bandwidth and v onl are independent of the input signal direction. v iso = off channel isolation = 20 log for v in at 100 khz v onl = on channel loss = 20 log for v in at 100 khz to 50 mhz bandwidth (bw) = the frequency 3 db below v onl v ct = use v iso setup and test to all other switch analog input/outputs terminated with 50 output dut input 50 50 generator reference transmitted figure 5. off channel isolation/on channel loss (bw)/crosstalk (on channel to off channel)/v onl 50 v out v in v out v in off on off v out v cc gnd output v in c l dut figure 6. charge injection: (q) v in open output figure 7. total harmonic distortion plus noise versus frequency 0.01 0.1 1 0.001 10 100 1000 10000 100000 frequency (hz) thd (%) figure 8. charge injection versus v is -20 -15 -10 -5 0 5 0 0.5 1 1.5 v in (v) charge injection q (pc) -25 -30 2 2.5 3 3.5 4 4.5 5 1.65 v 2.5 v 3.0 v 3.6 v
NLAS9099 http://onsemi.com 8 figure 9. on-resistance vs. com voltage 0 0.4 0.8 1.2 0.0 0.5 1.0 1.5 2.0 3.0 v in (v) r on ( ) figure 10. r on vs. v in vs. temperature @ v cc = 3.0 v 0 0.4 0.8 1.2 1.6 2 0.0 1.0 2.0 3.0 4.0 5.0 v com (v) r on ( ) figure 11. r on vs. v in vs. temperature @ v cc = 3.6 v 0.0 0.4 0.6 0.8 0.0 1.0 2.0 3.0 r on ( ) v in (v) figure 12. bandwidth vs. frequency @ v cc = 1.65 v to 3.6 v frequency (mhz) p out (db) 1 1000 100 10 0.1 0 -2 -20 figure 13. off-isolation vs. frequency @ v cc = 1.65 v to 3.6 v frequency (mhz) 0 -10 -70 p out (db) figure 14. phase angle vs. frequency @ v cc = 1.65 v to 3.6 v frequency (mhz) 40 30 -50 phase (deg) 0.5 1.5 2.5 3.5 4.5 2.5 0.5 1.5 2.5 3.5 4.0 -4 -6 -8 -10 -12 -14 -16 -18 1 1000 100 10 0.1 -20 -30 -40 -50 -60 1 1000 100 10 0.1 20 10 0 -10 -20 -30 -40 1.8 v 2.5 v 3.0 v 3.6 v -40 c 85 c 25 c -40 c 85 c 25 c 0.2 0.3 0.5 0.7 0.1
NLAS9099 http://onsemi.com 9 device ordering information device order number device nomenclature package type tape & reel size ? circuit indicator technology device function package suffix tape & reel suffix NLAS9099mn1r2g nl as 9099 mn1 r2g qfn (pb-free) 3000 unit / reel for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NLAS9099 http://onsemi.com 10 package dimensions qfn-16 (3 x 3 x 0.85 mm) case 485ae-01 issue o 16x seating plane l d e 0.15 c a a1 e d2 e2 b 1 4 58 12 9 16 13 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.25 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. 5. outline meets jedec dimensions per mo-220, variation veed-6. ?? ?? b a 0.15 c top view side view bottom view pin 1 location 0.10 c 0.08 c (a3) c 16 x 16x note 5 0.10 c 0.05 c a b note 3 k 16x exposed pad dim min nom max millimeters a 0.800 0.900 1.000 a1 0.000 0.025 0.050 a3 0.200 ref b 0.180 0.250 0.300 d 3.00 bsc d2 1.250 1.40 1.550 e 3.00 bsc e2 1.250 1.40 1.550 e 0.500 bsc k 0.200 --- --- l 0.300 0.400 0.500 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. NLAS9099/d publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 literature fulfillment : ?literature distribution center for on semiconductor ?p .o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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